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HM60N03 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

Overview: HM60N03 N-Channel Enhancement Mode Power MOSFET.

General Description

The HM60N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

General

Key Features

  • VDS =30V,ID =60A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 13mΩ @ VGS=4.5V Schematic diagram.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability HM60N03.

More Datasheets from H&M Semiconductor

Part Number Description
HM60N03D N-Channel Enhancement Mode Power MOSFET
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HM60N05 N-Channel Enhancement Mode Power MOSFET
HM60N05K N-Channel Enhancement Mode Power MOSFET
HM60N06 Power MOSFET
HM60N06K MOSFET

HM60N03 Distributor