HM7N65 Datasheet (H&M Semiconductor)

HM7N65 Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode. These devic

HM7N65 Features

* 7.0A, 650V, RDS(on) = 1.26Ω @VGS = 10 V

* Low gate charge ( typical 29nC)

* High ruggedness

* Fast wsitching

* 100% avalanche tested

* Improved dv/dt capability {D GDS TO-220 GD S TO-220F

* ◀▲ {G

* {S Absolute Maximum Rating