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HM80N70 Datasheet Preview

HM80N70 Datasheet

N-Channel Enhancement Mode Power MOSFET

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+01
80VDS±25VGS66A(ID) N-Channel Enha ncement Mode MOSFET
Features
VDSS=80VVGSS=±25VID=66A
RDS(ON)=12m(Max.)@VGS=10V
Reliab le and Rugged
Advancedtrench process technology
HighDensity Cell Design For Ultra Low
On-Resistance

Applications
Synchronous Rectification
Power Management in Inverter System

Switching Time Test Circuit and
Waveforms
Pin Description


HM80N70
Marking and pin Assignment
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
HM80N70
Device
HM80N70
Device Package
TO-220-3L
Reel Size
 -

 Page 1
Shenzhen H&M Semiconductor Co.Ltd
http//www.hmsemi.com
Tape width
-
Quantity
-




H&M Semiconductor

HM80N70 Datasheet Preview

HM80N70 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

+01
80VDS±25VGS66A(ID) N-Channel Enha ncement Mode MOSFET
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol
VDSS
VGSS
ID
IDP
IS
TJ
TSTG
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current
300us Pulsed Drain Current Tested
Diode Continuous Forward Current
Operating Junction Temperature
Storage Temperature Range
TC=100°C
TC=25°C
Typical Unit
80
V
±25
V
46
A
66
A
240
A
66
A
175
°C
-55 ~ 175 °C
Electrical Characteristics (TA=25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V,ID=250uA
IDSS
VGS(th)
Zero Gate Voltage Drain Current
VDS=64V,VGS=0V
TJ=85°C
Gate Threshold Voltage
VDS=VGS,ID=-250uA
IGSS Gate Leakage Current
RDS(on)1 Drain-Source On-Resistance
VGS=±25V, VDS=0V
VGS=10V, ID=30A
Diode Characteristics
VSD1 Diode Forward Voltage
trr
Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics2
RG Gate Resistance
ISD=20A,VGS=0V
ISD=30A,
dISD/dt=100A/us
VGS=0V, VDS=0V,
Frequency=1MHz
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, VDS=40V
Frequency=1MHz
td(on) Turn-On Delay Time
tr
Turn-On Rise Time
td(off) Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD=40V, RL=30
ID=30A, VGEN=10V
RG=6
Gate Charge Characteristics2
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=40V, VGS=10V
ID=30A
Note: 1: Pulse test ; pulse width 300ns, duty cycle 2%.
2: Guaranteed by design, not subject to production testing.
Min.
80
2
Typ
3
10
0.8
44
60
1.5
2900
290
175
14
11
51
22
55
12
16
Max. Unit
V
1
30
uA
4V
±100 nA
12 m
1.3 V
Ns
nC
pF
25
20
92
ns
40
77
nC
Page 2

 Shenzhen H&M Semiconductor Co.Ltd
http//www.hmsemi.com


Part Number HM80N70
Description N-Channel Enhancement Mode Power MOSFET
Maker H&M Semiconductor
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