HM4806 mosfet equivalent, dual n-channel mosfet.
* VDS =20V,ID =7.5A RDS(ON) <10mΩ @ VGS=10V (Typ:8.0mΩ)
Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche vol.
General Features
* VDS =20V,ID =7.5A RDS(ON) <10mΩ @ VGS=10V (Typ:8.0mΩ)
Schematic diagram
* High density ce.
Image gallery
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