HM4806 - Dual N-Channel MOSFET

Datasheet Summary

Description

The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =20V,ID =7.5A RDS(ON).

H&M semi

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Datasheet Details

Part number	HM4806
Manufacturer	H&M semi
File Size	579.02 KB
Description	Dual N-Channel MOSFET
Datasheet	HM4806 Datasheet
Additional preview pages of the HM4806 datasheet.

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HM 'XDON-Channel Enhancement Mode Power MOSFET Description The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =7.5A RDS(ON) <10mΩ @ VGS=10V (Typ:8.

Published: Apr 18, 2024 |