| Title | |
| Description | The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =7.5A RDS(ON) <10mΩ @ VGS=10V (Typ:8.0mΩ) Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Exce... |
| Features |
● VDS =20V,ID =7.5A RDS(ON) <10mΩ @ VGS=10V (Typ:8.0mΩ) Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability HM Application ● Power s... |
| Datasheet |
 HM4806 Datasheet - 579.02KB |
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