| Title | |
| Description | The HM100N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =55A RDS(ON) <4.0mΩ @ VGS=10V (Typ:3.0mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for ... |
| Features |
● VDS =30V,ID =55A RDS(ON) <4.0mΩ @ VGS=10V (Typ:3.0mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard s... |
| Datasheet |
 HM55N03D Datasheet - 952.64KB |
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