HM55N03D - N-Channel Enhancement Mode Power MOSFET

Description

The HM100N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =30V,ID =55A RDS(ON).

H&M semi

📥 Download Datasheet

Datasheet Details

Part number	HM55N03D
Manufacturer	H&M semi
File Size	952.64 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM55N03D Datasheet
Additional preview pages of the HM55N03D datasheet.

📁 Similar Datasheet

HM55 - PRECISION METAL FILM RESISTORS (RCD)
HM55 - Shielded Drum Compact Package Low Cost Inductors (TT)
HM551 - HM500 Series / Ac/Dc Switching Modules (Artesyn Technologies)
HM552 - HM500 Series / Ac/Dc Switching Modules (Artesyn Technologies)
HM5551 - NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HM55P06K - P-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM50 - HM50 / HM51 Series / Miniature Power Inductors (BI Technologies)
HM50-xxx - HM50 / HM51 Series / Miniature Power Inductors (BI Technologies)
HM500 - HM500 Series / Ac/Dc Switching Modules (Artesyn Technologies)
HM501C - PFM boost DC-DC converter (H&M Semiconductor)

Other Datasheets by H&M semi

HM5565A - One Cell Lithium-ion/Polymer Battery Protection IC
HM50N06K - N-Channel Enhancement Mode Power MOSFET
HM50P03 - P-Channel MOSFET
HM5183 - High-Voltage Low-Power Synchronous BOOST Controller
HM5184 - Synchronous boost chip
HM5185 - High-voltage low-power synchronous boost controller
HM5223 - Dual SPDT Analog Switch
HM5228 - Dual SPDT Negative Signal Handing Analog Switch

Full PDF Text Transcription

Click to expand full text

HM55N03D N-Channel Enhancement Mode Power MOSFET Description The HM100N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =55A RDS(ON) <4.0mΩ @ VGS=10V (Typ:3.

Published: Apr 24, 2024 |