HM50N06K Datasheet | H&M Semiconductor

N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM50N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL Features - VDS =60V,ID =50A RDS(ON) <20mΩ @ VGS=10V - High density cell design for ultra low Rdson - Fully characterized Avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Schematic diagram H&M SEMI Application - Power switching application - Hard Switched and High Frequency Circuits - Uninterruptible Power Supply Marking and pin...