HM50N06K
Overview
The HM50N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
- VDS =60V,ID =50A RDS(ON) <20mΩ @ VGS=10V
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability Schematic diagram H&M SEMI HM50N06K
