HM50N06D Description
The HM50N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
HM50N06D Key Features
- VDS = 60V,ID =50A RDS(ON) < 6.5mΩ @ VGS=10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Low gate to drain charge to reduce switching losses
- Power switching application
- Load switch
- Tape width
- Quantity