HM50N06D Datasheet | H&M Semiconductor

N-Channel Enhancement Mode Power MOSFET Description The HM50N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS = 60V,ID =50A RDS(ON) < 6.5mΩ @ VGS=10V (Typ:5mΩ) - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Low gate to drain charge to reduce switching losses Schematic diagram Application - Power switching application - Load switch Marking and pin assignment Package Marking and Ordering Information Device Marking Device Device Package DFN5X6-8L Reel Size - Tape width -...