HM50N06D
Overview
The HM50N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
- VDS = 60V,ID =50A RDS(ON) < 6.5mΩ @ VGS=10V (Typ:5mΩ)
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Low gate to drain charge to reduce switching losses Schematic diagram
