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HM50N06D

Manufacturer: H&M Semiconductor

HM50N06D datasheet by H&M Semiconductor.

HM50N06D datasheet preview

HM50N06D Datasheet Details

Part number	HM50N06D
Datasheet	HM50N06D-HMSemiconductor.pdf
File Size	406.77 KB
Manufacturer	H&M Semiconductor
Description	N-Channel Enhancement Mode Power MOSFET

HM50N06D Overview

The HM50N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

HM50N06D Key Features

VDS = 60V,ID =50A RDS(ON) < 6.5mΩ @ VGS=10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Low gate to drain charge to reduce switching losses
Power switching application
Load switch
Tape width
Quantity

HM50N06K from other manufacturers

View HM50N06K datasheet index

Brand Logo	Part Number	Description	Other Manufacturers
	HM50N06K	N-Channel Enhancement Mode Power MOSFET	H-M semi

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HM50N06D Distributor