HM50N08
Overview
The HM50N08 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
- VDS =80V,ID =50A RDS(ON) < 16mΩ @ VGS=10V (Typ:13mΩ)
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
