HM3416E Description
20V N-Channel Enhancement-Mode MOSFET 20V N 沟道增强型 MOS 管 HM3416E VDS= 20 ID=4.2 A RDS(ON), Vgs @ 1.8V, Ids @ 3A = 36mΩ RDS(ON), Vgs @ 2.5V, Ids @ 3.8 A = 28mΩ RDS(ON), Vgs @ 4.5V, Ids @ 4.2 A = 24mΩ ESD.
HM3416E is N-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
| Part Number | Description |
|---|---|
| HM3416 | 1A Synchronous Step-Down Converter |
| HM3416B | N-Channel Enhancement Mode Power MOSFET |
| HM3410 | 1.2A synchronous rectification Buck converter |
| HM3413 | P-Channel Enhancement Mode Power MOSFET |
| HM3413B | P-Channel Enhancement Mode Power MOSFET |
20V N-Channel Enhancement-Mode MOSFET 20V N 沟道增强型 MOS 管 HM3416E VDS= 20 ID=4.2 A RDS(ON), Vgs @ 1.8V, Ids @ 3A = 36mΩ RDS(ON), Vgs @ 2.5V, Ids @ 3.8 A = 28mΩ RDS(ON), Vgs @ 4.5V, Ids @ 4.2 A = 24mΩ ESD.