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HM3413B Datasheet

Manufacturer: H&M Semiconductor
HM3413B datasheet preview

HM3413B Details

Part number HM3413B
Datasheet HM3413B-HMSemiconductor.pdf
File Size 426.03 KB
Manufacturer H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
HM3413B page 2 HM3413B page 3

HM3413B Overview

The HM3413B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

HM3413B Key Features

  • VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package

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