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HM3414B Datasheet

Manufacturer: H&M Semiconductor
HM3414B datasheet preview

HM3414B Details

Part number HM3414B
Datasheet HM3414B-HMSemiconductor.pdf
File Size 380.69 KB
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
HM3414B page 2 HM3414B page 3

HM3414B Overview

The HM3414B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.

HM3414B Key Features

  • VDS = 20V,ID = 2.9A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package
  • Battery protection -Load switch -Power management

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