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HM3415B Datasheet

P-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM3415B Overview

The HM3415B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

HM3415B Key Features

  • VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 47mΩ @ VGS=-4.5V ESD Rating: 2500V HBM
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface mount package
  • PWM application
  • Load switch

More Datasheets from H&M Semiconductor

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HM3415B Distributor