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HM3415E Datasheet

Manufacturer: H&M Semiconductor
HM3415E datasheet preview

HM3415E Details

Part number HM3415E
Datasheet HM3415E-HMSemiconductor.pdf
File Size 482.37 KB
Manufacturer H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
HM3415E page 2 HM3415E page 3

HM3415E Overview

The HM3415E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

HM3415E Key Features

  • VDS = -20V,ID =-4A RDS(ON) < 53mΩ @ VGS=-2.5V RDS(ON) < 40mΩ @ VGS=-4.5V ESD Rating: 2500V HBM
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface mount package
  • PWM application
  • Load switch

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