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HM3415E Datasheet

P-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM3415E Overview

The HM3415E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

HM3415E Key Features

  • VDS = -20V,ID =-4A RDS(ON) < 53mΩ @ VGS=-2.5V RDS(ON) < 40mΩ @ VGS=-4.5V ESD Rating: 2500V HBM
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface mount package
  • PWM application
  • Load switch

HM3415E Distributor