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HM3416B Datasheet

Manufacturer: H&M Semiconductor
HM3416B datasheet preview

HM3416B Details

Part number HM3416B
Datasheet HM3416B-HMSemiconductor.pdf
File Size 593.76 KB
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
HM3416B page 2 HM3416B page 3

HM3416B Overview

The HM3416B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

HM3416B Key Features

  • VDS = 20V,ID =6A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V ESD Rating: 2000V HBM
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface mount package
  • PWM application
  • Load switch

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