HM3416E Overview
20V N-Channel Enhancement-Mode MOSFET 20V N 沟道增强型 MOS 管 HM3416E VDS= 20 ID=4.2 A RDS(ON), Vgs @ 1.8V, Ids @ 3A = 36mΩ RDS(ON), Vgs @ 2.5V, Ids @ 3.8 A = 28mΩ RDS(ON), Vgs @ 4.5V, Ids @ 4.2 A = 24mΩ ESD.
HM3416E Details
| Part number | HM3416E |
|---|---|
| Datasheet | HM3416E-HMSemiconductor.pdf |
| File Size | 259.16 KB |
| Manufacturer | H&M Semiconductor |
| Description | N-Channel Enhancement Mode Power MOSFET |
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