HM8810E Datasheet (H&M Semiconductor)

Part HM8810E
Description Dual N-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer H&M Semiconductor
Size 673.17 KB
Pricing from 0.0544 USD, available from UnikeyIC and Unikeyic (ICkey).
H&M Semiconductor

HM8810E Overview

Description

The HM8810E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

Key Features

  • VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package 8810 Marking and pin Assignment Marking and pin Assignment

Price & Availability

Seller Inventory Price Breaks Buy
UnikeyIC 400000 500+ : 0.0544 USD
1000+ : 0.0535 USD
1500+ : 0.052 USD
View Offer
Unikeyic (ICkey) 400000 500+ : 0.0544 USD
1000+ : 0.0535 USD
1500+ : 0.052 USD
View Offer