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HM8810B

Manufacturer: H&M Semiconductor

HM8810B datasheet by H&M Semiconductor.

HM8810B datasheet preview

HM8810B Datasheet Details

Part number HM8810B
Datasheet HM8810B-HMsemi.pdf
File Size 661.45 KB
Manufacturer H&M Semiconductor
Description Dual N-Channel MOSFET
HM8810B page 2 HM8810B page 3

HM8810B Overview

The HM8810% uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

HM8810B Key Features

  • VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package
  • PWM application -Load switch

HM8810A from other manufacturers

View HM8810A datasheet index

Brand Logo Part Number Description Other Manufacturers
VBsemi Logo HM8810A Dual N-Channel MOSFET VBsemi
H&M Semiconductor logo - Manufacturer

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HM8810B Distributor

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