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12N65 Datasheet Preview

12N65 Datasheet

N-Channel MOSFET

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12A, 650V, N沟道 场效应晶体管 产品参数规格书
工业型号
FQP12N65C
FQPF12N65C
公司型号
H12N65P
H12N65F
通俗命名
12N65
H
HAOHAI
封装标识
P: TO-220AB
F: TO-220FP
包装方式
条管装
盒装箱装
每管数量
50Pcs
12N65 Series
N-Channel MOSFET
每盒数量
1000Pcs
每箱数量
5000Pcs
Features
 Originative New Design
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge: 38nC(Typ.)
 Extended Safe Operating Area
 Lower RDS(ON): 0.67(Typ.) @ VGS=10V
 100% Avalanche Tested
 Package: TO-220AB & TO-220F
ID=12A
BVDSS=650V
RDS(on)=0.67
■特点
 导通电阻低、开关速度快、驱动简单、可并联使用、输入阻抗高、符合RoHS规范
■应用范围
 开关电源、LCD电源、LED驱动电源、机箱电源、UPS电源、
 各种充电器、电子整流器、电子变压器、逆变器、控制器、转换器、
 风扇控制板、以及电源适配器、汽车稳压器等线性放大和功率开关电路
■封装形式
 TO-220P TO-220AB(半塑封)
 TO-220F TO-220FP(全塑封)
12N65 Series Pin Assignment
3-Lead Plastic TO-220AB
Package Code: P
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
2D
Series Symbol: 1 G
3S
Absolute Maximum RatingsTC=25unless otherwise specified
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain CurrentContinuous (TC=25)
Drain CurrenContinuous (TC=100)
IDM Drain Current – Pulsed (Note 1)
VGS Gate-Source Voltage
EAS Single Pulsed Avalanche Energy (Note 2)
IAR Avalanche Current (Note 1)
EAR Repetitive Avalanche Energy (Note 1)
dv/dt
Peak Diode Recovery dv/dt (Note 3)
PD
Power Dissipation (TC=25)
Power Dissipation - Derate above 25
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
  * Drain current limited by maximum junction temperature TO-220F
Thermal Resistance Characteristics
Symbol
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
TO-220AB
Typ.
Max.
-- 0.56
0.5 --
-- 62.5
Value
TO-220AB TO-220F
650 600
12 12*
7.4 7.4*
48 48*
±30 ±30
860 870
12 12
22.5 22.5
4.5 4.5
225 51
1.78 0.41
-50 ~ +150
300
TO-220F
Typ.
Max.
-- 2.43
-- --
-- 62.5
Units
V
A
V
mJ
A
mJ
V/ns
W
W/
Units
/W
http://www.szhhe.com
HAOHAI ELECTRONICS CO., LTD.
1页 共7
致力於中國功率器件優秀供應商
kkg@kkg.com.cn
H12N65C-PF-BDB




HAOHAI

12N65 Datasheet Preview

12N65 Datasheet

N-Channel MOSFET

No Preview Available !

12A, 650V, N沟道 场效应晶体管 产品参数规格书
Electrical CharacteristicsTC=25unless otherwise specified
Symbol
Parameter
Test Conditions
Min.
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=VGS, ID=250μA
VGS=10V, ID=6A
Off Characteristics
BVDSS
BVDSS/TJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS=0V, ID=250μA
ID=250μA, Referenced to 25
VDS=650V, VGS=0V
VDS=520V, TC=125
VGS= +30V, VDS=0V
VGS= -30V, VDS=1V
2.0
--
650
--
--
--
--
--
12N65 Series
N-Channel MOSFET
Typ. Max. Units
-- 4.0 V
0.67 0.78
-- -- V
0.5 -- V/
-- 1
μA
-- 10
-- 100
nA
-- -100
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=25V
VGS=0V
f=1.0MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=325V
ID=12A
RG=25
(Note 4,5)
VDS=520V
ID=12A, VGS=10V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage
IS=12A, VGS=0V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
  Notes:
  1. Repetitive Rating: Pulse width limited by maximum junction temperature
  2. L=11mH, I AS =12A, V DD =50V, R G =25, Starting T J =25
  3. I SD 12A, di/dt 200A/μS, V DD BV DSS , Starting T J =25
  4. Pulse Test: Pulse Width 300μS, Duty Cycle 2%
  5. Essentially Independent of Operating Temperature
IS=12A, VGS=0V
diF/dt=100μA/μs (Note 4)
http://www.szhhe.com
HAOHAI ELECTRONICS CO., LTD.
2页 共7
致力於中國功率器件優秀供應商
--
1835
2385
-- 185 240 pF
-- 16 21
-- 30 70
-- 85 180
nS
-- 140 280
-- 90 190
-- 38 49
-- 8 -- nC
-- 13 --
-- -- 12
A
-- -- 48
-- -- 1.4 V
-- 420 -- nS
-- 4.9 -- μC
kkg@kkg.com.cn
H12N65C-PF-BDB


Part Number 12N65
Description N-Channel MOSFET
Maker HAOHAI
PDF Download

12N65 Datasheet PDF






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