| Part Number | 12N65 Datasheet |
|---|---|
| Manufacturer | Nell Power Semiconductor |
| Overview | The Nell 12N65 is a three-terminal silicon device with current conduction capability of 12A, fast switching speed, low on-state resistance, breakdown voltage rating of 650V, and max. threshold voltage. RDS(ON) = 0.85Ω @ VGS = 10V Ultra low gate charge(54nC max.) Low reverse transfer capacitance (CRSS = 25pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D G DS TO-220AB (12N65A) GDS D (Drain) TO-220F (12N65AF) G (Gate) . |
12N65 Datasheet and Specifications PDF
The 12N65 is a N-Channel Power MOSFET.
| Part Number | 12N65 Datasheet |
|---|---|
| Description | N-CHANNEL POWER MOSFET |
| Manufacturer | Unisonic Technologies |
| Overview |
The UTC 12N65 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC’s proprietary, planar stripe and DMOS technology.
These devices are suited for high.
* RDS(ON) < 0.85Ω @ VGS = 10V, ID = 6.0A * Ultra low gate charge ( typical 42 nC ) * Low reverse transfer capacitance ( CRSS = typical 25 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
* SYMBOL Power MOSFET Copyright ©. |
| Part Number | 12N65 Datasheet |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
12N65
·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 650V (Min) ·Static Drain-Source On-Res.
*Drain Current *ID= 12A@ TC=25℃ *Drain Source Voltage- : VDSS= 650V (Min) *Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) *Avalanche Energy Specified *Fast Switching *Simple Drive Requirements *DESCRITION *Designed for high efficiency switch mode power supply. *ABSOLUTE MAXIMUM RATINGS(T. |
| Part Number | 12N65 Datasheet |
|---|---|
| Description | N-CHANNEL MOSFET |
| Manufacturer | CHONGQING PINGYANG |
| Overview |
12N65(F,B,H)
12A mps,650 Volts N-CHANNEL MOSFET
FEATURE
12A,650V,RDS(ON)=0.7Ω@VGS=10V/6A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220A.
* 12A,650V,RDS(ON)=0.7Ω@VGS=10V/6A * Low gate charge * Low Ciss * Fast switching * 100% avalanche tested * Improved dv/dt capability TO-220AB 12N65 ITO-220AB 12N65F TO-263 12N65B TO-262 12N65H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate. |