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HAOPIN

XL1225 Datasheet Preview

XL1225 Datasheet

SCRs

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TM
HPM
HAOPIN MICROELECTRONICS CO.,LTD.
XL1225
SCRs
Description
Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose
switching and phase control applications. These devices are intended to be interfaced directly to
microcontrollers, logic integrated circuits and other low power gate trigger circuits.
Symbol
Simplified outline
a
Pin
1
2
3
TAB
k
g
123
TO-92
Description
Cathode
anode
gate
anode
SYMBOL PARAMETER
VDRM
Repetitive peak off-state voltages
IT RMS
RMS on-state current full sine wave
I T ( AV )
Average on-state current
Applications:
Motor control
Industrial and domestic lighting
Heating
Static switching
Features
Blocking voltage to 400 V
On-state RMS current to 0.8 A
Ultra low gate trigger current
Value
400
0.8
0.5
Unit
V
A
A
SYMBOL
R jc
R ja
PARAMETER
Thermal resistance
Junc. To case
Thermal resistance
Junc. To amb
CONDITIONS MIN
TYP
-
-
MAX
75
UNIT
/W
200 /W
http://www.haopin.com
1/4




HAOPIN

XL1225 Datasheet Preview

XL1225 Datasheet

SCRs

No Preview Available !

TM
HPM
HAOPIN MICROELECTRONICS CO.,LTD.
XL1225
SCRs
Limiting values in accordance with the Maximum system(IEC 134)
SYMBOL PARAMETER
VDRM
Repetitive peak off-state
Voltages
CONDITIONS
TJ=40oC to 125 (R =GK 1K)
MIN
-
IT(RMS)
I T ( AV )
VGRM
IGFM
Tsld
P GF(AV)
Tstg
Tj
RMS on-state current
Tc=40
Averagev On-state
Current
Reverse peak gate
voltage
Peak gate current
Soldering temperature
Average gate power
Storage temperature
Operating junction
Temperature
Haif Cycle=1800 Tc=40
I =GR 10mA;
300 s 120 pps,TA=25
1.6mm from case 10s max
-
-
8
1
-
-
-40
-40
MAX
400
UNIT
V
0.8 A
0.5
-
-
-
250
0.01
112255
A
V
A
W
TJ=25OC unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
Static characteristics
IGT
Gate trigger current
Anode Voltage=7 Vdc,RL=100 Ohms
Tc=25
VTM
Forward On- voltage
ITM=1A peak@Ta=25
IH
IDRM
IRRM
VT(TO)
Holding Current
Peak Forward or Reverse
Blocking Current
On-state Threshold voltage
Tc=25
Tc=-40
Tc=125
Tc=25
MIN TYP MAX UNIT
-
- 200
A
- - 1.7 V
2.2 V
- - 5 mA
- - 10 mA
-
-
100 A
1
V
Dynamic Characteristics
tgd Gate controlled delay tine IG=10mA,dlG/dt=0.1A/us
tg
commutated tum-
off time
VD=0.67VDRM, Tj=85 ;
IT=IT(AV), VR=35V;
-
- 2.2
s
- - 200 s
http://www.haopin.com
2/4


Part Number XL1225
Description SCRs
Maker HAOPIN
Total Page 4 Pages
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