2SC2510 Description
HG Semiconductors 2SC2510HG RF POWER TRANSISTOR ROHS pliance,Silicon NPN POWER TRANSISTOR Specified 28V, 28MHz Characteristics Output Power : Po = 150W PEP (Min.) Power Gain : Gp = 12.2dB (Min.) Collector Efficiency ηC:.
- Part: 2SC2510
- Manufacturer: HGSemi
- Size: 410.03 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Toshiba |
2SC2510 | Silicon NPN Epitaxial Planar Type Transistor |
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Toshiba |
2SC2510A | Silicon NPN epitaxial planar type Transistor |