H06N60E

Manufacturer: HI-SINCERITY

H06N60E datasheet PDF for N-Channel Power Field Effect Transistor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

H06N60E Datasheet Details

Part number	H06N60E
Datasheet	H06N60E H06N60U-HI Datasheet (PDF)
File Size	70.89 KB
Manufacturer	HI-SINCERITY
Description	N-Channel Power Field Effect Transistor

H06N60E Overview

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and mutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time.

H06N60E Key Features

Robust High Voltage Termination
Avalanc he Energy Specified

More Datasheets from HI-SINCERITY

See all HI-SINCERITY datasheets

Part Number	Description
H06N60F	N-Channel Power Field Effect Transistor
H06N60U	N-Channel Power Field Effect Transistor

H06N60E Datasheet Details

H06N60E Overview

H06N60E Key Features

More Datasheets from HI-SINCERITY

H06N60E Distributor