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HI-SINCERITY

H06N60E Datasheet Preview

H06N60E Datasheet

N-Channel Power Field Effect Transistor

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005.05.12
Page No. : 1/6
H06N60 Series
N-Channel Power Field Effect Transistor
Description
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
Features
Robust High Voltage Termination
Avalanc he Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast
Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
H06N60 Series Pin Assignment
Tab
3
2
1
Tab
3-Lead Plastic TO-263
Package Code: U
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3
2
1
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3
2
1
H06N60 Series
Symbol:
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
ID Drain to Current (Continuous)
IDM Drain to Current (Pulsed)
VGS Gate-to-Source Voltage (Continue)
Total Power Dissipation (TC=25oC)
H06N60U (TO-263)
H06N60E (TO-220AB)
H06N60F (TO-220FP)
PD Derate above 25OC
H06N60U (TO-263)
H06N60E (TO-220AB)
H06N60F (TO-220FP)
Tj Operating Temperature Range
Tstg Storage Temperature Range
EAS
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25OC
(VDD=100V, VGS=10V, IL=6A, L=10mH, RG=25)
TL
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
Note: 1. VDD=50V, ID=10A
2. Pulse Width and frequency is limited by Tj(max) and thermal response
Value
6
24
±30
110
110
40
0.58
0.58
0.33
-55 to 150
-55 to 150
250
260
Units
A
A
V
W
W
W
W/°C
W/°C
W/oC
OC
OC
mJ
°C
H06N60U, H06N60E, H06N60F
HSMC Product Specification




HI-SINCERITY

H06N60E Datasheet Preview

H06N60E Datasheet

N-Channel Power Field Effect Transistor

No Preview Available !

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005.05.12
Page No. : 2/6
Thermal Characteristics
Symbol
Parameter
RθJC
RθJA
Thermal Resistance Junction to Case Max.
Thermal Resistance Junction to Ambient Max.
Value
TO-263
TO-220AB
TO-220FP
62
1.7
1.7
3.3
Units
OC/W
OC/W
ELectrical Characteristics (TJ=25OC, unless otherwise specified)
Symbol
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
LD
LS
Characteristic
Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
Drain-Source Leakage Current (VDS=600V, VGS=0V)
Drain-Source Leakage Current (VDS=600V, VGS=0V, Tj=125OC)
Gate-Source Leakage Current-Forward (Vgsf=30V, VDS=0V)
Gate-Source Leakage Current-Reverse (Vgsr=-30V, VDS=0V)
Gate Threshold Voltage (VDS=VGS, ID=250uA)
Static Drain-Source On-Resistance (VGS=10V, ID=3.6A)*
Forward Transconductance (VDS=15V, ID=3.6A)*
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, VDS=25V, f=1MHz
Turn-on Delay Time
Rise Time
Turn-off Delay Time
(VDD=300V, ID=6A, RG=9.1,
VGS=10V)*
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS=480V, ID=6A, VGS=10V)*
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
*: Pulse Test: Pulse Width 300us, Duty Cycle2%
Min. Typ. Max. Unit
600 - - V
- - 1 uA
- - 50 uA
- - 100 nA
- - -100 nA
234V
- 1 1.2
24 - S
- 1100 -
- 150 -
pF
- 25 -
- 14 -
- 19 -
ns
- 40 -
- 26 -
- 35.5 50
- 8.1 - nC
- 14.1 -
- 4.5 - nH
- 7.5 - nH
Source-Drain Diode
Symbol
VSD Forward On Voltage(1)
ton Forward Turn-On Time
trr Reverse Recovery Time
**: Negligible, Dominated by circuit inductance
Characteristic
IS=6A, VGS=0V, TJ=25oC
IS=6A, dIS/dt=100A/us
Min. Typ. Max. Units
- - 1.2 V
- ** - ns
- 266 -
ns
H06N60U, H06N60E, H06N60F
HSMC Product Specification


Part Number H06N60E
Description N-Channel Power Field Effect Transistor
Maker HI-SINCERITY
Total Page 6 Pages
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