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H06N60E - N-Channel Power Field Effect Transistor

Download the H06N60E datasheet PDF. This datasheet also covers the H06N60U-HI variant, as both devices belong to the same n-channel power field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

Features

  • Robust High Voltage Termination.
  • Avalanc he Energy Specified.
  • Source-to-Drain Diode Recovery Time Comparable to.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H06N60U-HI-SINCERITY.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H06N60E
Manufacturer HI-SINCERITY
File Size 70.89 KB
Description N-Channel Power Field Effect Transistor
Datasheet download datasheet H06N60E Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by HI-SINCERITY

Part Number Description
H06N60F N-Channel Power Field Effect Transistor
H06N60U N-Channel Power Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.05.12 Page No. : 1/6 H06N60 Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time.
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