H06N60U Datasheet N-Channel Power Field Effect Transistor

Manufacturer: HI-SINCERITY

Download the H06N60U datasheet PDF. This datasheet also includes the H06N60U-HI variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

H06N60U n-channel power field effect transistor by HI-SINCERITY - Datasheet Preview — Note: The manufacturer provides a single datasheet file (H06N60U-HI-SINCERITY.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	H06N60U
Manufacturer	HI-SINCERITY
File Size	70.89 KB
Description	N-Channel Power Field Effect Transistor
Datasheet	H06N60U Datasheet

General Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

The new energy efficient design also offers a drain-to-source diode with a fast recovery time.

Overview

HI-SINCERITY MICROELECTRONICS CORP.

Spec.

No.

Key Features

Robust High Voltage Termination.
Avalanc he Energy Specified.
Source-to-Drain Diode Recovery Time Comparable to.

More Datasheets from HI-SINCERITY

Part Number	Description
H06N60E	N-Channel Power Field Effect Transistor
H06N60F	N-Channel Power Field Effect Transistor