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H06N60U

H06N60U is N-Channel Power Field Effect Transistor manufactured by HI-SINCERITY.
H06N60U datasheet preview

H06N60U Datasheet

Part number H06N60U
Download H06N60U / H06N60U-HI Datasheet (PDF)
File Size 70.89 KB
Manufacturer HI-SINCERITY
Description N-Channel Power Field Effect Transistor
H06N60U page 2 H06N60U page 3

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Part Number Description
H06N60E N-Channel Power Field Effect Transistor
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H06N60U Distributor

H06N60U Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and mutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time.

H06N60U Key Features

  • Robust High Voltage Termination
  • Avalanc he Energy Specified

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