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H06N60E

H06N60E is N-Channel Power Field Effect Transistor manufactured by HI-SINCERITY.
H06N60E datasheet preview

H06N60E Datasheet

Part number H06N60E
Datasheet H06N60E / H06N60U-HI Datasheet PDF (Download)
File Size 70.89 KB
Manufacturer HI-SINCERITY
Description N-Channel Power Field Effect Transistor
H06N60E page 2 H06N60E page 3

H06N60E Overview

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and mutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time.

H06N60E Key Features

  • Robust High Voltage Termination
  • Avalanc he Energy Specified

Related HI-SINCERITY Datasheets

Part Number Description
H06N60F N-Channel Power Field Effect Transistor
H06N60U N-Channel Power Field Effect Transistor

H06N60E Distributor

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