• Part: H06N60E
  • Description: N-Channel Power Field Effect Transistor
  • Category: Transistor
  • Manufacturer: HI-SINCERITY
  • Size: 70.89 KB
H06N60E Datasheet (PDF) Download
HI-SINCERITY
H06N60E

Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

Key Features

  • Robust High Voltage Termination
  • Avalanc he Energy Specified
  • Source-to-Drain Diode Recovery Time Comparable to