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H06N60F - N-Channel Power Field Effect Transistor

Download the H06N60F datasheet PDF. This datasheet also covers the H06N60U-HI variant, as both devices belong to the same n-channel power field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

Features

  • Robust High Voltage Termination.
  • Avalanc he Energy Specified.
  • Source-to-Drain Diode Recovery Time Comparable to.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H06N60U-HI-SINCERITY.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H06N60F
Manufacturer HI-SINCERITY
File Size 70.89 KB
Description N-Channel Power Field Effect Transistor
Datasheet download datasheet H06N60F Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by HI-SINCERITY

Part Number Description
H06N60E N-Channel Power Field Effect Transistor
H06N60U N-Channel Power Field Effect Transistor

Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.05.12 Page No. : 1/6 H06N60 Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time.
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