Datasheet Details
| Part number | HS50N06DA |
|---|---|
| Manufacturer | HOMSEMI |
| File Size | 713.23 KB |
| Description | N-channel 60V MOSFET |
| Datasheet |
 HS50N06DA-HOMSEMI.pdf
|
| Part number | HS50N06DA |
|---|---|
| Manufacturer | HOMSEMI |
| File Size | 713.23 KB |
| Description | N-channel 60V MOSFET |
| Datasheet |
HS50N06DA-HOMSEMI.pdf
|
The HS50N06DA is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance. RDS(ON)≦22mΩ@VGS=10V VDS 60 V Super high density cell design f
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