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N channel 60V MOSFET
HS50N06DA
1. Description
The HS50N06DA is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD inverter, computer power management and DC to DC converter circuits which need low in-line power loss.
2. Feature
● RDS(ON)≦22mΩ@VGS=10V
VDS
60
V
● Super high density cell design for extremely low
RDS(on)
22
mΩ
RDS(ON) ● Exceptional on-resistance and maximum DC
ID
50
A
current capability
3. Pin configuration
Order Number HS50N06DA
Package TO-252
TO-252
Coperight@ Guangzhou Chengqi Semiconductor Co.,LTD.All rights reserved.
HS50N06DA Datasheet
