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HY1001M - N-Channel Enhancement Mode MOSFET

HOOYI

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Datasheet Details

Part number	HY1001M
Manufacturer	HOOYI
File Size	1.02 MB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	HY1001M-HOOYI.pdf

HY1001M Product details

Description

5 Sec, 245°C 1000 Hrs, Bias @ 125°C 168 Hrs, 100%RH, 2atm, 121°C 500 Cycles, -65°C~150°C 10 www.hooyi-semi.com

Features

70V/75A, RDS(ON)=7.8mΩ (typ. ) @ VGS=10V.
Avalanche Rated.
Reliable and Rugged.
Lead Free and Green Devices Available (RoHS Compliant).

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Published: Mar 1, 2016 |