Download the HY1403S datasheet PDF.
This datasheet also covers the HY1403 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
S
D G
TO-252-2L
S
D G
TO-251-3L
S
D G
TO-251-3L
Applications
Full PDF Text Transcription for HY1403S (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HY1403S. For precise diagrams, and layout, please refer to the original PDF.
HY1403D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/42A, RDS(ON)= 10 mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Excellent CdV/dt effect ...
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100% EAS Guaranteed • Super Low Gate Charge • Excellent CdV/dt effect decline • Advanced high cell density Trench technology • Halogen - Free Device Available Pin Description S D G TO-252-2L S D G TO-251-3L S D G TO-251-3L Applications • Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Information S DUS HY1403 HY1403 HY1403 YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G Package Code D : TO-252-2L S : TO-251-3L Date Code YYXXX WW U : TO-251-3L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finis
HY1403S Datasheet
