• Part: HY1606B
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: HOOYI
  • Size: 622.17 KB
Download HY1606B Datasheet PDF
HOOYI
HY1606B
HY1606B is N-Channel MOSFET manufactured by HOOYI.
- Part of the HY1606P comparator family.
Features - 60V/66A RDS(ON) = 10.4 m(typ.) @ VGS=10V - 100% avalanche tested - Reliable and Rugged - Lead Free and Green Devices Available (Ro HS pliant) Pin Description DS G TO-220FB-3L G DS TO-263-2L Applications - Switching application - Power Management for Inverter Systems. Ordering and Marking Information N-Channel MOSFET HY1606 HY1606 YYXXXJWW G YYXXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding pounds/die attach materials and 100% matte tin plate Termination finish;which are fully pliant with Ro HS. HUAYI lead -free products meet or exceed the lead Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr-oduct and/or to this document at any time without notice. .hymexa. V1.0 HY1606P/B Absolute Maximum Ratings Symbol Parameter Rating mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 60 ±25 175 -55 to 175 66 IDM Pulsed Drain Current - ID Continuous Drain...