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HY3410PS, HY3410P Datasheet - HOOYI

HY3410PS N-Channel Enhancement Mode MOSFET

HY3410P/M/B/PS/PM/MF Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 100 ±25 175 -55 to 175 140 IDM Pulsed Drain Current ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction.

HY3410PS, HY3410P Datasheet

This datasheet PDF includes multiple part numbers: HY3410PS, HY3410P. Please refer to the document for exact specifications by model.
HY3410PS Datasheet Preview Page 2 HY3410PS Datasheet Preview Page 3

Datasheet Details

Part number:

HY3410PS, HY3410P

Manufacturer:

HOOYI

File Size:

1.02 MB

Description:

N-channel enhancement mode mosfet.

This datasheet PDF includes multiple part numbers: HY3410PS, HY3410P.
Please refer to the document for exact specifications by model.

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TAGS

HY3410PS HY3410P N-Channel Enhancement Mode MOSFET HOOYI

HY3410PS Distributor