Datasheet4U Logo Datasheet4U.com

HY3610P Datasheet - HOOYI

N-Channel Enhancement Mode MOSFET

HY3610P General Description

* 100V/160A RDS(ON) = 4.5 mΩ (typ.) @ VGS=10V * 100% avalanche tested * Reliable and Rugged * Lead Free and Green Devices Available (RoHS Compliant) G D S D Applications * Switching application * Power Management for Inverter Systems. G S N-Channe.

HY3610P Datasheet (1.10 MB)

Preview of HY3610P PDF

Datasheet Details

Part number:

HY3610P

Manufacturer:

HOOYI

File Size:

1.10 MB

Description:

N-channel enhancement mode mosfet.

📁 Related Datasheet

HY3606 N-Channel MOSFET (HOOYI)

HY3606B N-Channel MOSFET (HOOYI)

HY3606P N-Channel MOSFET (HOOYI)

HY3003 N-Channel MOSFET (HOOYI)

HY3003B N-Channel MOSFET (HOOYI)

HY3003P N-Channel MOSFET (HOOYI)

HY3007B N-Channel Enhancement Mode MOSFET (HOOYI)

HY3007M N-Channel Enhancement Mode MOSFET (HOOYI)

HY3007P N-Channel Enhancement Mode MOSFET (HOOYI)

HY3007PM N-Channel Enhancement Mode MOSFET (HOOYI)

TAGS

HY3610P N-Channel Enhancement Mode MOSFET HOOYI

Image Gallery

HY3610P Datasheet Preview Page 2 HY3610P Datasheet Preview Page 3

HY3610P Distributor