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HY3610P - N-Channel Enhancement Mode MOSFET

General Description

100V/160A RDS(ON) = 4.5 mΩ (typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D S D Applications Switching application

Power Management for Inverter Systems.

Key Features

  • Pin.

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Datasheet Details

Part number HY3610P
Manufacturer HOOYI
File Size 1.10 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY3610P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HY3610P N-Channel Enhancement Mode MOSFET Features Pin Description • 100V/160A RDS(ON) = 4.5 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) G D S D Applications • Switching application • Power Management for Inverter Systems. G S N-Channel MOSFET Ordering and Marking Information P HY3610 YYÿ XXXJWW G Package Code P : TO220-3L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature.