Download the HY3810P datasheet PDF.
This datasheet also covers the HY3810 variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
DS G TO-220FB-3L
DS G TO-220FB-3S
G DS TO-263-2L
Applications
Switching application
Power Management for Inverter Systems.
Key Features
100V/180A
RDS(ON) = 5.0 m(typ. ) @ VGS=10V.
100% avalanche tested.
Reliable and Rugged.
Lead Free and Green Devices Available
(RoHS Compliant)
N-Channel Enhancement Mode MOSFET
Pin.
Full PDF Text Transcription for HY3810P (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HY3810P. For precise diagrams, and layout, please refer to the original PDF.
HY3810P/M/B/PS/PM Features • 100V/180A RDS(ON) = 5.0 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compl...
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eliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description DS G TO-220FB-3L DS G TO-220FB-3S G DS TO-263-2L Applications Switching application Power Management for Inverter Systems.
HY3810P Datasheet
