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HY4004W - N-Channel MOSFET

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Part number HY4004W
Manufacturer HOOYI
File Size 523.17 KB
Description N-Channel MOSFET
Datasheet download datasheet HY4004W Datasheet

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HY4004W/A Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 40 ±20 175 -55 to 175 208 IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 750** 208 138 268 125 0.56 40 EAS Avalanche Energy, Single Pulsed L=0.5mH Note * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=32V 1.