HY4008B Datasheet | HOOYI

HY4008P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Features - 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V - 100% avalanche tested - Reliable and Rugged - Lead Free and Green Devices Available (RoHS pliant) Pin Description DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications - Switching application - Power Management for Inverter Systems. DS G TO-3PS-3L DS G TO-3PS-3M G N-Channel MOSFET Ordering and Marking Information P HY4008 YYÿ XXXJWW G PS HY4008 YYÿ XXXJWW G M HY4008 YYÿ XXXJWW G PM HY4008 YYÿ XXXJWW G B HY4008 YYÿ XXXJWW...