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ATF-13100 Datasheet 2-18 GHz Low Noise Gallium Arsenide FET

Manufacturer: HP

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Datasheet Details

Part number ATF-13100
Manufacturer HP
File Size 38.13 KB
Description 2-18 GHz Low Noise Gallium Arsenide FET
Datasheet download datasheet ATF-13100 Datasheet

General Description

The ATF-13100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor chip.

This device is designed for use in low noise, wideband amplifier and oscillator applications in the 2-18␣ GHz frequency range.

This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250␣ microns.

Overview

2–18 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13100.

Key Features

  • Low Noise Figure: 1.1 dB Typical at 12 GHz.
  • High Associated Gain: 9.5 dB Typical at 12 GHz.
  • High Output Power: 17.5 dBm Typical P1 dB at 12 GHz.

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