ATF-13100 fet equivalent, 2-18 ghz low noise gallium arsenide fet.
* Low Noise Figure: 1.1 dB Typical at 12 GHz
* High Associated Gain: 9.5 dB Typical at 12 GHz
* High Output Power: 17.5 dBm Typical P1 dB at 12 GHz
Descriptio.
in the 2-18␣ GHz frequency range.
This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery.
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