ATF-10236 Datasheet - HP

0.5-12 GHz Low Noise Gallium Arsenide FET

ATF-10236 Features

* Low Noise Figure: 0.8␣ dB Typical at 4␣ GHz

* Low Bias: VDS= 2 V, IDS= 20␣ mA

* High Associated Gain: 13.0␣ dB Typical at 4␣ GHz

* High Output Power: 20.0␣ dBm Typical P1dBat 4␣ GHz

* Cost Effective Ceramic Microstrip Package

* Tape-And-Reel Packagin

ATF-10236 General Description

The ATF-10236 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package. Its low noise figure makes this device appropriate for use in the first and second stages of low noise amplifiers operating in the 0.5-12␣ GHz frequency ra.

ATF-10236 Datasheet (41.83 KB)