Hewlett-Packard ATF-10100
The ATF-10100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor chip. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operating in the 0.5-12␣ GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length interconnects between drain fingers.| Part No. | ATF-10100 |
|---|---|
| Datasheet | ATF-10100 Download |
| Manufacturer |  Hewlett-Packard |
| Description | 0.5-12 GHz Low Noise Gallium Arsenide FET |
| Buy | Stock & Price |
FEATURES
● Low Noise Figure: 0.5 dB Typical at 4 GHz● Low Bias: VDS =2V,IDS␣ =␣ 25mA
● High Associated Gain: 14.0 dB Typical at 4 GHz
● High Output Power: 21.0 dBm Typical P1 dB at 4 GHz
DESCRIPTION
Total gate periphery is 500␣ microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. Chip Outline G SD G SELECTRICAL SPECIFICATIONS
, TA = 25°C Symbol Parameters and Test Conditions[1] NFO Optimum Noise Figure: VCE = 2 V, IDS = 25 mA f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz GA Gain @ NFO; VDS = 2 V, IDS
