Datasheet4U Logo Datasheet4U.com

ATF-10100 Datasheet 0.5-12 Ghz Low Noise Gallium Arsenide Fet

Manufacturer: HP

Overview: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10100.

Datasheet Details

Part number ATF-10100
Manufacturer HP
File Size 45.91 KB
Description 0.5-12 GHz Low Noise Gallium Arsenide FET
Datasheet ATF-10100-HP.pdf

General Description

The ATF-10100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor chip.

Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operating in the 0.5-12␣ GHz frequency range.

This GaAs FET device has a nominal 0.3 micron gate length interconnects between drain fingers.

Key Features

  • Low Noise Figure: 0.5 dB Typical at 4 GHz.
  • Low Bias: VDS =2V,IDS␣ =␣ 25mA.
  • High Associated Gain: 14.0 dB Typical at 4 GHz.
  • High Output Power: 21.0 dBm Typical P1 dB at 4 GHz.

More Datasheets from HP

Part Number Description
ATF-10236 0.5-12 GHz Low Noise Gallium Arsenide FET
ATF-10736 General Purpose Gallium Arsenide FET
ATF-13100 2-18 GHz Low Noise Gallium Arsenide FET
ATF-13336 2-16 GHz Low Noise Gallium Arsenide FET
ATF-13484 1-16 GHz Low Noise Gallium Arsenide FET
ATF-13736 Low Noise Gallium Arsenide FET
ATF-13786 Surface Mount Gallium Arsenide FET
ATF-21170 0.5-6 GHz Low Noise Gallium Arsenide FET
ATF-25170 0.5-10 GHz Low Noise Gallium Arsenide FET
ATF-25570 0.5-10 GHz General Purpose Gallium Arsenide FET

ATF-10100 Distributor