ATF-10100
ATF-10100 is 0.5-12 GHz Low Noise Gallium Arsenide FET manufactured by HP.
- 12 GHz Low Noise Gallium Arsenide FET
Technical Data
Features
- Low Noise Figure: 0.5 dB Typical at 4 GHz
- Low Bias: VDS =2V,IDS␣ =␣ 25mA
- High Associated Gain: 14.0 dB Typical at 4 GHz
- High Output Power: 21.0 dBm Typical P1 dB at 4 GHz
Description
The ATF-10100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor chip. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operating in the 0.5-12␣ GHz frequency range.
This GaAs FET device has a nominal 0.3 micron gate length interconnects between drain fingers. Total gate periphery is 500␣ microns. Proven gold based metallization...
