• Part: ATF-13336
  • Description: 2-16 GHz Low Noise Gallium Arsenide FET
  • Manufacturer: HP
  • Size: 41.48 KB
Download ATF-13336 Datasheet PDF
HP
ATF-13336
ATF-13336 is 2-16 GHz Low Noise Gallium Arsenide FET manufactured by HP.
- 16 GHz Low Noise Gallium Arsenide FET Technical Data Features - Low Noise Figure: 1.4␣ dB Typical at 12␣ GHz - High Associated Gain: 9.0␣ dB Typical at 12␣ GHz - High Output Power: 17.5␣ dBm Typical P 1 dB at 12␣ GHz - Cost Effective Ceramic Microstrip Package - Tape-and-Reel Packaging Option Available[1] Description The ATF-13336 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in low noise amplifiers operating in the 2-16␣ GHz frequency range. 36 micro-X Package This GaAs FET device has a nominal 0.3 micron gate length with a...