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ATF-13336 Datasheet 2-16 Ghz Low Noise Gallium Arsenide Fet

Manufacturer: HP

Overview: 2 – 16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13336.

Datasheet Details

Part number ATF-13336
Manufacturer HP
File Size 41.48 KB
Description 2-16 GHz Low Noise Gallium Arsenide FET
Datasheet ATF-13336-HP.pdf

General Description

The ATF-13336 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package.

Its premium noise figure makes this device appropriate for use in low noise amplifiers operating in the 2-16␣ GHz frequency range.

36 micro-X Package This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250␣ microns.

Key Features

  • Low Noise Figure: 1.4␣ dB Typical at 12␣ GHz.
  • High Associated Gain: 9.0␣ dB Typical at 12␣ GHz.
  • High Output Power: 17.5␣ dBm Typical P 1 dB at 12␣ GHz.
  • Cost Effective Ceramic Microstrip Package.
  • Tape-and-Reel Packaging Option Available[1].

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ATF-13336 Distributor