ATF-13336 Description
The ATF-13336 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in low noise amplifiers operating in the 2-16␣ GHz frequency range. 36 micro-X Package This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250␣ microns.
ATF-13336 Key Features
- Low Noise Figure: 1.4␣ dB Typical at 12␣ GHz
- High Associated Gain: 9.0␣ dB Typical at 12␣ GHz
- High Output Power: 17.5␣ dBm Typical P 1 dB at 12␣ GHz
- Cost Effective Ceramic Microstrip Package
- Tape-and-Reel Packaging Option Available[1]