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ATF-13786 - Surface Mount Gallium Arsenide FET

General Description

Hewlett-Packard’s ATF-13786 is a low cost Gallium Arsenide Schottky barrier-gate field effect transistor housed in a surface mount plastic package.

This device is designed for use in low cost, surface mount oscillators operating over the RF and microwave frequency ranges.

Key Features

  • Low Cost Surface Mount Plastic Package.
  • High fMAX: 60 GHz Typical.
  • Low Phase Noise at 10 GHz: -110 dBc/Hz @ 100 kHz Typical.
  • Output Power at 10 GHz: up to 10 dBm.
  • Tape-and-Reel Packaging Option Available 25 20 MSG 15 S 21 10 5 MAG MSG 0 1 5 10 20.

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Datasheet Details

Part number ATF-13786
Manufacturer HP
File Size 43.45 KB
Description Surface Mount Gallium Arsenide FET
Datasheet download datasheet ATF-13786 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Surface Mount Gallium Arsenide FET for Oscillators Technical Data ATF-13786 GAIN (dB) 137 Features • Low Cost Surface Mount Plastic Package • High fMAX: 60 GHz Typical • Low Phase Noise at 10 GHz: -110 dBc/Hz @ 100 kHz Typical • Output Power at 10 GHz: up to 10 dBm • Tape-and-Reel Packaging Option Available 25 20 MSG 15 S 21 10 5 MAG MSG 0 1 5 10 20 FREQUENCY (GHz) Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VDS = 3 V, IDS = 40 mA. Description Hewlett-Packard’s ATF-13786 is a low cost Gallium Arsenide Schottky barrier-gate field effect transistor housed in a surface mount plastic package. This device is designed for use in low cost, surface mount oscillators operating over the RF and microwave frequency ranges.