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ATF-13786 Datasheet Surface Mount Gallium Arsenide Fet

Manufacturer: HP

Overview: Surface Mount Gallium Arsenide FET for Oscillators Technical Data ATF-13786 GAIN.

Datasheet Details

Part number ATF-13786
Manufacturer HP
File Size 43.45 KB
Description Surface Mount Gallium Arsenide FET
Datasheet ATF-13786-HP.pdf

General Description

Hewlett-Packard’s ATF-13786 is a low cost Gallium Arsenide Schottky barrier-gate field effect transistor housed in a surface mount plastic package.

This device is designed for use in low cost, surface mount oscillators operating over the RF and microwave frequency ranges.

The ATF-13786 has sufficient gain for easy use as a negative R cell, without excess gain that can lead to unwanted oscillations and mode jumping.

Key Features

  • Low Cost Surface Mount Plastic Package.
  • High fMAX: 60 GHz Typical.
  • Low Phase Noise at 10 GHz: -110 dBc/Hz @ 100 kHz Typical.
  • Output Power at 10 GHz: up to 10 dBm.
  • Tape-and-Reel Packaging Option Available 25 20 MSG 15 S 21 10 5 MAG MSG 0 1 5 10 20.

More Datasheets from HP

Part Number Description
ATF-13736 Low Noise Gallium Arsenide FET
ATF-13100 2-18 GHz Low Noise Gallium Arsenide FET
ATF-13336 2-16 GHz Low Noise Gallium Arsenide FET
ATF-13484 1-16 GHz Low Noise Gallium Arsenide FET
ATF-10100 0.5-12 GHz Low Noise Gallium Arsenide FET
ATF-10236 0.5-12 GHz Low Noise Gallium Arsenide FET
ATF-10736 General Purpose Gallium Arsenide FET
ATF-21170 0.5-6 GHz Low Noise Gallium Arsenide FET
ATF-25170 0.5-10 GHz Low Noise Gallium Arsenide FET
ATF-25570 0.5-10 GHz General Purpose Gallium Arsenide FET

ATF-13786 Distributor