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ATF-13736 - Low Noise Gallium Arsenide FET

General Description

The ATF-13736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package.

Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers operating in the 2-16 GHz frequency range.

Key Features

  • Low Noise Figure: 1.8␣ dB Typical at 12␣ GHz.
  • High Associated Gain: 9.0␣ dB Typical at 12␣ GHz.
  • High Output Power: 17.5␣ dB Typical at 12␣ GHz.
  • Cost Effective Ceramic Microstrip Package.
  • Tape-and-Reel Packaging Option Available[1].

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Datasheet Details

Part number ATF-13736
Manufacturer HP
File Size 49.54 KB
Description Low Noise Gallium Arsenide FET
Datasheet download datasheet ATF-13736 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2–16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13736 Features • Low Noise Figure: 1.8␣ dB Typical at 12␣ GHz • High Associated Gain: 9.0␣ dB Typical at 12␣ GHz • High Output Power: 17.5␣ dB Typical at 12␣ GHz • Cost Effective Ceramic Microstrip Package • Tape-and-Reel Packaging Option Available[1] Description The ATF-13736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers operating in the 2-16 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 36 micro-X Package 250␣ microns.