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ATF-13736 Datasheet Low Noise Gallium Arsenide Fet

Manufacturer: HP

Overview: 2–16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13736.

Datasheet Details

Part number ATF-13736
Manufacturer HP
File Size 49.54 KB
Description Low Noise Gallium Arsenide FET
Datasheet ATF-13736-HP.pdf

General Description

The ATF-13736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package.

Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers operating in the 2-16 GHz frequency range.

This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 36 micro-X Package 250␣ microns.

Key Features

  • Low Noise Figure: 1.8␣ dB Typical at 12␣ GHz.
  • High Associated Gain: 9.0␣ dB Typical at 12␣ GHz.
  • High Output Power: 17.5␣ dB Typical at 12␣ GHz.
  • Cost Effective Ceramic Microstrip Package.
  • Tape-and-Reel Packaging Option Available[1].

More Datasheets from HP

Part Number Description
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ATF-13100 2-18 GHz Low Noise Gallium Arsenide FET
ATF-13336 2-16 GHz Low Noise Gallium Arsenide FET
ATF-13484 1-16 GHz Low Noise Gallium Arsenide FET
ATF-10100 0.5-12 GHz Low Noise Gallium Arsenide FET
ATF-10236 0.5-12 GHz Low Noise Gallium Arsenide FET
ATF-10736 General Purpose Gallium Arsenide FET
ATF-21170 0.5-6 GHz Low Noise Gallium Arsenide FET
ATF-25170 0.5-10 GHz Low Noise Gallium Arsenide FET
ATF-25570 0.5-10 GHz General Purpose Gallium Arsenide FET

ATF-13736 Distributor