ATF-13736 Description
The ATF-13736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers operating in the 2-16 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 36 micro-X Package 250␣ microns.
ATF-13736 Key Features
- Low Noise Figure: 1.8␣ dB Typical at 12␣ GHz
- High Associated Gain: 9.0␣ dB Typical at 12␣ GHz
- High Output Power: 17.5␣ dB Typical at 12␣ GHz
- Cost Effective Ceramic Microstrip Package
- Tape-and-Reel Packaging Option Available[1]