Hewlett-Packard ATF-13100
The ATF-13100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor chip. This device is designed for use in low noise, wideband amplifier and oscillator applications in the 2-18␣ GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250␣ microns.| Part No. | ATF-13100 |
|---|---|
| Datasheet | ATF-13100 Download |
| Manufacturer |  Hewlett-Packard |
| Description | 2-18 GHz Low Noise Gallium Arsenide FET |
| Buy | Stock & Price |
FEATURES
● Low Noise Figure: 1.1 dB Typical at 12 GHz● High Associated Gain: 9.5 dB Typical at 12 GHz
● High Output Power: 17.5 dBm Typical P1 dB at 12 GHz
DESCRIPTION
Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. The recommended mounting procedure is to die attach at a stage temperature of 300°C using a gold-tin preform under forming gas. Assembly can be preformed with either wedge or ball bonding using 0.7 mil gold wire. See also “Chip Use” in theAPPLICATIONS
section. Chip Outline D S G SELECTRICAL SPECIFICATIONS
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