ATF-13100
ATF-13100 is 2-18 GHz Low Noise Gallium Arsenide FET manufactured by HP.
2- 18 GHz Low Noise Gallium Arsenide FET
Technical Data
Features
- Low Noise Figure: 1.1 dB Typical at 12 GHz
- High Associated Gain: 9.5 dB Typical at 12 GHz
- High Output Power: 17.5 dBm Typical P1 dB at 12 GHz
Description
The ATF-13100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor chip. This device is designed for use in low noise, wideband amplifier and oscillator applications in the 2-18␣ GHz frequency range.
This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250␣ microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.
The remended mounting...
