Datasheet Details
| Part number | ATF-13100 |
|---|---|
| Manufacturer | HP |
| File Size | 38.13 KB |
| Description | 2-18 GHz Low Noise Gallium Arsenide FET |
| Datasheet | ATF-13100-HP.pdf |
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Overview: 2–18 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13100.
| Part number | ATF-13100 |
|---|---|
| Manufacturer | HP |
| File Size | 38.13 KB |
| Description | 2-18 GHz Low Noise Gallium Arsenide FET |
| Datasheet | ATF-13100-HP.pdf |
|
|
|
The ATF-13100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor chip.
This device is designed for use in low noise, wideband amplifier and oscillator applications in the 2-18␣ GHz frequency range.
This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250␣ microns.
| Part Number | Description |
|---|---|
| ATF-13336 | 2-16 GHz Low Noise Gallium Arsenide FET |
| ATF-13484 | 1-16 GHz Low Noise Gallium Arsenide FET |
| ATF-13736 | Low Noise Gallium Arsenide FET |
| ATF-13786 | Surface Mount Gallium Arsenide FET |
| ATF-10100 | 0.5-12 GHz Low Noise Gallium Arsenide FET |
| ATF-10236 | 0.5-12 GHz Low Noise Gallium Arsenide FET |
| ATF-10736 | General Purpose Gallium Arsenide FET |
| ATF-21170 | 0.5-6 GHz Low Noise Gallium Arsenide FET |
| ATF-25170 | 0.5-10 GHz Low Noise Gallium Arsenide FET |
| ATF-25570 | 0.5-10 GHz General Purpose Gallium Arsenide FET |