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ATF-13100 - 2-18 GHz Low Noise Gallium Arsenide FET

General Description

The ATF-13100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor chip.

This device is designed for use in low noise, wideband amplifier and oscillator applications in the 2-18␣ GHz frequency range.

Key Features

  • Low Noise Figure: 1.1 dB Typical at 12 GHz.
  • High Associated Gain: 9.5 dB Typical at 12 GHz.
  • High Output Power: 17.5 dBm Typical P1 dB at 12 GHz.

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Datasheet Details

Part number ATF-13100
Manufacturer HP
File Size 38.13 KB
Description 2-18 GHz Low Noise Gallium Arsenide FET
Datasheet download datasheet ATF-13100 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2–18 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13100 Features • Low Noise Figure: 1.1 dB Typical at 12 GHz • High Associated Gain: 9.5 dB Typical at 12 GHz • High Output Power: 17.5 dBm Typical P1 dB at 12 GHz Description The ATF-13100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor chip. This device is designed for use in low noise, wideband amplifier and oscillator applications in the 2-18␣ GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250␣ microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. The recommended mounting procedure is to die attach at a stage temperature of 300°C using a gold-tin preform under forming gas.