Hewlett-Packard ATF-10236
The ATF-10236 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package. Its low noise figure makes this device appropriate for use in the first and second stages of low noise amplifiers operating in the 0.5-12␣ GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers.| Part No. | ATF-10236 |
|---|---|
| Datasheet | ATF-10236 Download |
| Manufacturer |  Hewlett-Packard |
| Description | 0.5-12 GHz Low Noise Gallium Arsenide FET |
| Buy | Stock & Price |
FEATURES
● Low Noise Figure: 0.8␣ dB Typical at 4␣ GHz● Low Bias: VDS= 2 V, IDS= 20␣ mA
● High Associated Gain: 13.0␣ dB Typical at 4␣ GHz
● High Output Power: 20.0␣ dBm Typical P1dBat 4␣ GHz
● Cost Effective Ceramic Microstrip Package
● Tape-And-Reel Packaging Option Available [1]
DESCRIPTION
Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 36 micro-X PackageELECTRICAL SPECIFICATIONS
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