ATF-10236 Description
The ATF-10236 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package. Its low noise figure makes this device appropriate for use in the first and second stages of low noise amplifiers operating in the 0.5-12␣ GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers.
ATF-10236 Key Features
- Low Noise Figure: 0.8␣ dB Typical at 4␣ GHz
- Low Bias: VDS= 2 V, IDS= 20␣ mA
- High Associated Gain: 13.0␣ dB Typical at 4␣ GHz
- High Output Power: 20.0␣ dBm Typical P1dBat 4␣ GHz
- Cost Effective Ceramic Microstrip Package
- Tape-And-Reel Packaging Option Available [1]