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ATF-10236 Datasheet 0.5-12 Ghz Low Noise Gallium Arsenide Fet

Manufacturer: HP

Overview: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10236.

Datasheet Details

Part number ATF-10236
Manufacturer HP
File Size 41.83 KB
Description 0.5-12 GHz Low Noise Gallium Arsenide FET
Datasheet ATF-10236-HP.pdf

General Description

The ATF-10236 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package.

Its low noise figure makes this device appropriate for use in the first and second stages of low noise amplifiers operating in the 0.5-12␣ GHz frequency range.

This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers.

Key Features

  • Low Noise Figure: 0.8␣ dB Typical at 4␣ GHz.
  • Low Bias: VDS= 2 V, IDS= 20␣ mA.
  • High Associated Gain: 13.0␣ dB Typical at 4␣ GHz.
  • High Output Power: 20.0␣ dBm Typical P1dBat 4␣ GHz.
  • Cost Effective Ceramic Microstrip Package.
  • Tape-And-Reel Packaging Option Available [1].

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ATF-10236 Distributor