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ATF-10736 Datasheet General Purpose Gallium Arsenide Fet

Manufacturer: HP

Overview: 0.5 – 12 GHz General Purpose Gallium Arsenide FET Technical Data.

Datasheet Details

Part number ATF-10736
Manufacturer HP
File Size 49.70 KB
Description General Purpose Gallium Arsenide FET
Datasheet ATF-10736-HP.pdf

General Description

The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package.

Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers operating in the 0.5-12 GHz frequency range.

36 micro-X Package • Cost Effective Ceramic Microstrip Package • Tape-and-Reel Packaging Option Available [1] This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconcnects between drain fingers.

Key Features

  • High Associated Gain: 13.0␣ dB Typical at 4␣ GHz.
  • Low Bias: VDS = 2 V, IDS= 25␣ mA.
  • High Output Power: 20.0␣ dBm typical P 1 dB at 4␣ GHz.
  • Low Noise Figure: 1.2␣ dB Typical at 4␣ GHz.

More Datasheets from HP

Part Number Description
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ATF-13484 1-16 GHz Low Noise Gallium Arsenide FET
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ATF-10736 Distributor