ATF-13736
ATF-13736 is Low Noise Gallium Arsenide FET manufactured by HP.
2- 16 GHz Low Noise Gallium Arsenide FET
Technical Data
Features
- Low Noise Figure: 1.8␣ d B Typical at 12␣ GHz
- High Associated Gain: 9.0␣ d B Typical at 12␣ GHz
- High Output Power: 17.5␣ d B Typical at 12␣ GHz
- Cost Effective Ceramic Microstrip Package
- Tape-and-Reel Packaging Option Available[1]
Description
The ATF-13736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers operating in the 2-16 GHz frequency range.
This Ga As FET device has a nominal 0.3 micron gate length with a total gate periphery of
36 micro-X Package
250␣ microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units
NFO Optimum Noise Figure: VDS = 2.5 V, IDS = 20 m A
Gain @ NFO: VDS = 2.5 V, IDS = 20 m A f = 8.0 GHz d B f = 12.0 GHz d B f = 14.0 GHz d B f = 8.0 GHz d B f = 12.0 GHz d B f = 14.0 GHz d B
P1 d B
G1 d B gm IDSS VP
Power Output @ 1 d B Gain pression: VDS = 4 V, IDS = 40 m A 1 d B pressed Gain: VDS = 4 V, IDS = 40 m A
Transconductance: VDS = 2.5 V, VGS = 0 V
Saturated Drain Current: VDS = 2.5 V, VGS = 0 V
Pinch-off Voltage: VDS = 2.5 V, IDS = 1 m A f=12.0GHz d Bm f = 12.0 GHz d B mmho m A V
Note: 1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors”.
Min.
25 40 -4.0
Typ. 1.5 1.8 2.1 11.5 9.0 7.0 17.5
8.5 55 50...
