ATF-13100 Datasheet - HP

ATF-13100, 2-18 GHz Low Noise Gallium Arsenide FET

2 *18 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13100 .
The ATF-13100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor chip.

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Datasheet Details

Part number:

ATF-13100

Manufacturer:

File Size:

38.13 KB

Description:

2-18 GHz Low Noise Gallium Arsenide FET

Features

* Low Noise Figure: 1.1 dB Typical at 12 GHz
* High Associated Gain: 9.5 dB Typical at 12 GHz

Applications

* in the 2-18␣ GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250␣ microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. The recommended mounting procedure is to die attach at a stage t

ATF-13100 Distributors

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ATF-13100 2-18 GHz Low Noise Gallium Arsenide FET HP

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