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ATF-13100

2-18 GHz Low Noise Gallium Arsenide FET

ATF-13100 Features

* Low Noise Figure: 1.1 dB Typical at 12 GHz

* High Associated Gain: 9.5 dB Typical at 12 GHz

* High Output Power: 17.5 dBm Typical P1 dB at 12 GHz Description The ATF-13100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor chip. This device

ATF-13100 General Description

The ATF-13100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor chip. This device is designed for use in low noise, wideband amplifier and oscillator applications in the 2-18␣ GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length with a tot.

ATF-13100 Datasheet (38.13 KB)

Preview of ATF-13100 PDF

Datasheet Details

Part number:

ATF-13100

Manufacturer:

HP

File Size:

38.13 KB

Description:

2-18 ghz low noise gallium arsenide fet.

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ATF-13100 2-18 GHz Low Noise Gallium Arsenide FET HP

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