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ATF-13736

Low Noise Gallium Arsenide FET

ATF-13736 Features

* Low Noise Figure: 1.8␣ dB Typical at 12␣ GHz

* High Associated Gain: 9.0␣ dB Typical at 12␣ GHz

* High Output Power: 17.5␣ dB Typical at 12␣ GHz

* Cost Effective Ceramic Microstrip Package

* Tape-and-Reel Packaging Option Available[1] Description The ATF-13

ATF-13736 General Description

The ATF-13736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers operating in the 2-16 GHz frequency range. This GaAs FET .

ATF-13736 Datasheet (49.54 KB)

Preview of ATF-13736 PDF

Datasheet Details

Part number:

ATF-13736

Manufacturer:

HP

File Size:

49.54 KB

Description:

Low noise gallium arsenide fet.

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ATF-13736 Low Noise Gallium Arsenide FET HP

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