ATF-10100 - 0.5-12 GHz Low Noise Gallium Arsenide FET

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ATF-10100 0.5-12 GHz Low Noise Gallium Arsenide FET by HP - Datasheet Preview — Datasheet preview – ATF-10100

Datasheet Details

Part number	ATF-10100
Manufacturer	HP
File Size	45.91 KB
Description	0.5-12 GHz Low Noise Gallium Arsenide FET
Datasheet	ATF-10100 Datasheet
Additional preview pages of the ATF-10100 datasheet.

Product details

Description

The ATF-10100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor chip.Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operating in the 0.5-12␣ GHz frequency range.This GaAs FET device has a nominal 0.3 micron gate length interconnects between drain fingers.Total gate periphery is 500␣ microns.Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.Chip Outlin

Features

Low Noise Figure: 0.5 dB Typical at 4 GHz.
Low Bias: VDS =2V,IDS␣ =␣ 25mA.
High Associated Gain: 14.0 dB Typical at 4 GHz.
High Output Power: 21.0 dBm Typical P1 dB at 4 GHz.

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Published: Nov 8, 2017 |