ATF-36077 Datasheet - AVAGO

ATF-36077 Ultra Low Noise Pseudomorphic HEMT

AvagoTechnologies'ATF-36077isanultra-low-noisePseudo morphic High Electron Mobility Transistor (PHEMT), packaged in a low parasitic, surface-mountable ceramic package. Properly matched, this transistor will provide typical 12 GHz noise figures of 0.5 dB, or typical 4 GHz noise figures of 0.3 dB. Ad.

ATF-36077 Features

* PHEMT Technology

* Ultra-Low Noise Figure: 0.5 dB Typical at 12 GHz 0.3 dB Typical at 4 GHz

* High Associated Gain: 12 dB Typical at 12 GHz 17 dB Typical at 4 GHz

* Low Parasitic Ceramic Microstrip Package

* Tape-and-Reel Packing Option Available Applicati

ATF-36077-AVAGO.pdf