ATF-10736 - General Purpose Gallium Arsenide FET

Product Overview

ATF-10736 General Purpose Gallium Arsenide FET by HP - Datasheet Preview — Datasheet preview – ATF-10736

Datasheet Details

Part number	ATF-10736
Manufacturer	HP
File Size	49.70 KB
Description	General Purpose Gallium Arsenide FET
Datasheet	ATF-10736 Datasheet
Additional preview pages of the ATF-10736 datasheet.

Product details

Description

The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. Cost Effective Ceramic Microstrip Package Tape-and-Reel Packaging Option Available [1] This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconc

Features

High Associated Gain: 13.0␣ dB Typical at 4␣ GHz.
Low Bias: VDS = 2 V, IDS= 25␣ mA.
High Output Power: 20.0␣ dBm typical P 1 dB at 4␣ GHz.
Low Noise Figure: 1.2␣ dB Typical at 4␣ GHz.

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Published: Dec 23, 2024 |