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ATF-10736

General Purpose Gallium Arsenide FET

ATF-10736 Features

* High Associated Gain: 13.0␣ dB Typical at 4␣ GHz

* Low Bias: VDS = 2 V, IDS= 25␣ mA

* High Output Power: 20.0␣ dBm typical P 1 dB at 4␣ GHz

* Low Noise Figure: 1.2␣ dB Typical at 4␣ GHz Description The ATF-10736 is a high performance gallium arsenide Schottkybarrie

ATF-10736 General Description

The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers operating in the 0.5-12 GHz frequency range. 36 micro-X .

ATF-10736 Datasheet (49.70 KB)

Preview of ATF-10736 PDF

Datasheet Details

Part number:

ATF-10736

Manufacturer:

HP

File Size:

49.70 KB

Description:

General purpose gallium arsenide fet.

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ATF-10736 General Purpose Gallium Arsenide FET HP

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