HFF2N60 - N-Channel MOSFET

HUASHAN ELECTRONIC

Datasheet Details

Part number	HFF2N60
Manufacturer	HUASHAN ELECTRONIC
File Size	228.41 KB
Description	N-Channel MOSFET
Datasheet	HFF2N60 Datasheet
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Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFF2N60 APPLICATIONSL High-Speed Switching. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature Tj Operating Junction Temperature PD Allowable Power Dissipation Tc=25 VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current Tc=25 5 5 ~1 5 0 150 23W 600V ±30V 2.0A TO-220F 1G 2D 3S ELECTRICAL CHARACTERISTICS Ta=25 Symbol Characteristics Min Typ BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current 600 IGSS Gate –Source Leakage Current VGS(th) Gate Threshold Voltage 2.

Published: Nov 27, 2014 |