HFF2N60 Datasheet | HUASHAN ELECTRONIC

Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET APPLICATIONSL High-Speed Switching. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature Tj Operating Junction Temperature PD Allowable Power Dissipation Tc=25 VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current Tc=25 5 5 ~1 5 0 150 23W 600V ±30V 2.0A TO-220F 1G 2D 3S ELECTRICAL CHARACTERISTICS Ta=25 Symbol Characteristics Min Typ BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate - Source Leakage Current VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance gfs Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn - On Delay Time tr Rise Time td(off) Turn - Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate- Source Charge Qgd Gate- Drain Charge Is Continuous Source Current VSD Rth j-c Diode Forward Voltage Thermal Resistance Junction-to-Case - Pulse Test Pulse Width 300 s Duty Cycle...